Band diagram of the TiO2/MAPbI3 and Al2O3/MAPbI3 interfaces,... | Download Scientific Diagram
Band alignment and electrical properties of Al2O3/β-Ga2O3 heterojunctions: Applied Physics Letters: Vol 104, No 19
IETS spectrum and trap energy level within the Al2O3 band gap. (a)... | Download Scientific Diagram
Interpretation of the Changing the Band Gap of Al2O3 Depending on Its Crystalline Form: Connection with Different Local Symmetri
Valence band offsets for ALD SiO2 and Al2O3 on (InxGa1−x)2O3 for x = 0.25–0.74
Optical and Surface Studies of α-Al2O3 Powders
Band offsets at amorphous-crystalline Al2O3–SrTiO3 oxide interfaces
Calculated band alignment between HfO2, Al2O3, InGaAs, and GaAs. The... | Download Scientific Diagram
Structural, electronic structure, and band alignment properties at epitaxial NiO/Al2O3 heterojunction evaluated from synchrotron based X-ray techniques: Journal of Applied Physics: Vol 119, No 16
Interpretation of the Changing the Band Gap of Al2O3 Depending on Its Crystalline Form: Connection with Different Local Symmetries | The Journal of Physical Chemistry C
arXiv:1702.06498v1 [cond-mat.mtrl-sci] 21 Feb 2017
Band alignment and interfacial structure of ZnO/Si heterojunction with Al2O3 and HfO2 as interlayers: Applied Physics Letters: Vol 104, No 16
Band diagram of the TiO2/MAPbI3 and Al2O3/MAPbI3 interfaces,... | Download Scientific Diagram
Band offset determination for amorphous Al2O3 deposited on bulk AlN and atomic-layer epitaxial AlN on sapphire
Interpretation of the Changing the Band Gap of Al2O3 Depending on Its Crystalline Form: Connection with Different Local Symmetri
arXiv:1703.01778v1 [cond-mat.mtrl-sci] 6 Mar 2017
JSTS - Journal of Semiconductor Technology and Science
Band alignment of Al2O3 with (-201) β-Ga2O3
Structural and band alignment properties of Al2O3 on epitaxial Ge grown on (100), (110), and (111)A GaAs substrates by molecular
The origin of negative charging in amorphous Al2O3 films: the role of native defects
Band gap structure modification of amorphous anodic Al oxide film by Ti-alloying
Interface characterization of atomic layer deposited Al2O3 on m-plane GaN
Band Offset and Electron Affinity of Monolayer MoSe2 by Internal Photoemission
Energy band gaps for -Al2O3, r-TiO2, m-ZrO2 and m-HfO2 calculated with... | Download Scientific Diagram
